http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7981482-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_242f9943073f72a7e5ebaf173662f5b9 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02628 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08J7-06 |
| filingDate | 2006-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7afe97350b79b5a06d2067c4a67f369 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60146c10946b3d9d5fa38940aeb74b95 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3ea323ec8f489be4856a8f571c8f4de3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38134f9e45fc2f8203b0f19843fbb4b3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_765440782e2e2fd25e792574bd843679 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f98f5b42f6290b6b0788c370274cd14b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20ffff7413abb5b4b49ac497ee44bb72 |
| publicationDate | 2011-07-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-7981482-B1 |
| titleOfInvention | Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions |
| abstract | Methods for forming doped silane and/or semiconductor thin films, doped liquid phase silane compositions useful in such methods, and doped semiconductor thin films and structures. The composition is generally liquid at ambient temperatures and includes a Group IVA atom source and a dopant source. By irradiating a doped liquid silane during at least part of its deposition, a thin, substantially uniform doped oligomerized/polymerized silane film may be formed on a substrate. Such irradiation is believed to convert the doped silane film into a relatively high-molecular weight species with relatively high viscosity and relatively low volatility, typically by cross-linking, isomerization, oligomerization and/or polymerization. A film formed by the irradiation of doped liquid silanes can later be converted (generally by heating and annealing/recrystallization) into a doped, hydrogenated, amorphous silicon film or a doped, at least partially polycrystalline silicon film suitable for electronic devices. Thus, the present invention enables use of high throughput, low cost equipment and techniques for making doped semiconductor films of commercial quality and quantity from doped “liquid silicon.” |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9153432-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9362112-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011178321-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8624049-B2 |
| priorityDate | 2004-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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