http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7972942-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f157e1ba59c4453c0fbfffa7326572ed |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S257-913 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3221 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322 |
| filingDate | 2010-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b687354f89165bb5c81e59e444645d13 |
| publicationDate | 2011-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-7972942-B1 |
| titleOfInvention | Method of reducing metal impurities of upgraded metallurgical grade silicon wafer by using epitaxial silicon film |
| abstract | Metal impurities of an upgraded metallurgical grade (UMG) silicon (Si) wafer are reduced. The UMG Si wafer having a 5N (99.999%) purity is chosen to grow a high-quality epitaxial Si thin film through atmospheric pressure chemical vapor deposition (APCVD). Through heat treating diffusion, the epitaxial Si film is used to form sink positions for the metal impurities in the UMG Si wafer. By using concentration gradient, temperature gradient and interface defect, individual and comprehensive effects are built for enhancing purity of the UMG Si wafer from 5N to 6N. Thus, a low-cost Si wafer can be fabricated for Si-based solar cell through a simple, fast and effective method. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112683988-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103346074-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013149843-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112683988-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8685840-B2 |
| priorityDate | 2010-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.