| abstract |
A quasi-dielectrically isolated (QDI) bipolar structure using epitaxial lateral overgrowth (ELO) uses a combination of dielectric isolation (DI) and junction isolation (JI), providing better isolation properties than JI, while providing better heat dissipation than DI. ELO silicon is grown out of a deep basin with oxide sidewalls for lateral dielectric isolation. The ELO silicon is grown at a low temperature and pressure in an RF heated pancake-type reactor. Fabricated transistors have gains, ideality factors, and leakage currents comparable to bulk devices. A main application for QDI is in power integrated circuits (PICs) where isolation of high power devices and low power logic is necessary. |