| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate |
2005-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2011-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7afe501edae5cb19ed01f02a761b6186
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_272a79a2da75c2b9d4565f792d1e2e4a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b802f5f43ef381399605d686efe5cc55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ade2058b5e4e276603550df55ffc3934 |
| publicationDate |
2011-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7964512-B2 |
| titleOfInvention |
Method for etching high dielectric constant materials |
| abstract |
In one implementation, a method is provided for etching a high k dielectric material in a plasma etch reactor, the method comprising plasma etching the high k dielectric material with a first plasma gas reactant mixture having BCl 3 . The high k dielectric material may include Al 2 O 3 in a stack having a silicon layer. The etching may include supplying a passivation gas, for example C 2 H 4 , and may further include supplying a diluent gas such as a noble gas, for example He. In some implementations, the etching may be performed with a reactive ion etch process. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8808562-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8722547-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007249182-A1 |
| priorityDate |
2005-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |