http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7910292-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a06b83a4afe71100d08bc058ff0e7c43 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2008 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 |
| filingDate | 2004-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd44b6a7b878b86bd2c08829784ba9a5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_477acd053e76b4e3dff252402d429c75 |
| publicationDate | 2011-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-7910292-B2 |
| titleOfInvention | Lithographic process |
| abstract | The present invention provides a lithographic process for producing high aspect ratio parts from an epoxy-type negative photoresist comprising the steps of: (i) irradiating a prebaked masked epoxy-type negative photoresist on a substrate with light at a total energy density of from 18,000 to 35,000 mJ/cm 2 , (ii) post-baking the exposed photoresist at elevated temperature, and (iii) developing the exposed photoresist in a solvent, wherein no more than 15% of the energy density is contributed by light having a wavelength of 400 nm or less. The invention also discloses a reciprocating microengine ( 10 ) comprising a cylinder ( 14 ), piston ( 12 ) and crankshaft made by the process. |
| priorityDate | 2003-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.