http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7897208-B2

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-00
filingDate 2010-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2011-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38a6fe242528d23b8907872beafff79b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48711ce6298d8c1e6762759d7a13d715
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publicationDate 2011-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7897208-B2
titleOfInvention Low temperature ALD SiO2
abstract The present invention generally comprises a silicon dioxide atomic layer deposition method. By providing pyridine as a catalyst, water may be utilized as the oxidization source while depositing at a low temperature. Prior to exposing the substrate to the water, the substrate may be exposed to a pyridine soak process. Additionally, the water may be co-flowed to the chamber with the pyridine through separate conduits to reduce interaction prior to entering the chamber. Alternatively, the pyridine may be co-flowed with a silicon precursor that does not react with pyridine.
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priorityDate 2006-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 62.