| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0f79cabcbf6b29ccba3cb0ff9a4b416c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28264
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31662
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
2007-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2010-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d4d1052dc40b039589da2389962ea29
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a79ca817c10fb3ec1c9ab31c3aec3485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce7ec3136651c39654a50c2b903323da
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c29d23e8ad0fcb582d99b6ce9335b3d0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95ab37cffd563f29e40c8faaef5c57db |
| publicationDate |
2010-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7851365-B1 |
| titleOfInvention |
Methods for preparing semiconductor substrates and interfacial oxides thereon |
| abstract |
The invention provides novel methods for preparing semiconductor substrates for the growth of an ultra-thin epitaxial interfacial phase thereon. The invention additionally provides the ultra-thin epitaxial interfacial phase formed on a semiconductor substrate prepared by the methods of the invention. Epitaxiality of the interfacial phase is ensured by maintaining the cleaned semiconductor substrate in a static and inert atmosphere prior to oxidation to form the interfacial phase. Such interfacial phase are useful as capping layers and dielectric layers for semiconductor devices. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109727884-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9418963-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9589801-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013066977-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109727884-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017092725-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9018077-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10615085-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113594234-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113594234-A |
| priorityDate |
2006-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |