| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d380ea394238f732e0ab98fa00bad429 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-872 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-47 |
| filingDate |
2009-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2010-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab7244ffdd8ab4aba0281cb1801680e2 |
| publicationDate |
2010-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7842974-B2 |
| titleOfInvention |
Gallium nitride heterojunction schottky diode |
| abstract |
A gallium nitride based semiconductor diode includes a substrate, a GaN layer formed on the substrate, an AlGaN layer formed on the GaN layer where the GaN layer and the AlGaN layer forms a cathode region of the diode, a metal layer formed on the AlGaN layer forming a Schottky junction therewith where the metal layer forms an anode electrode of the diode, and a high barrier region formed in the top surface of the AlGaN layer and positioned under an edge of the metal layer. The high barrier region has a higher bandgap energy than the AlGaN layer or being more resistive than the AlGaN layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8253216-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8383499-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011278589-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8610235-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10333006-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8772901-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11217641-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2012319299-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8772144-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10573762-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8772911-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10038106-B2 |
| priorityDate |
2009-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |