| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5f1e30e67af85bf94440b5680ab8c718 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-872 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-58 |
| filingDate |
2005-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2008-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09d449aaad26dc79c8ec391ddf3f02aa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b29b2907cdcba52487004ecc52a51f68
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f6b6e10b1ecd7d74b0c2d4e4797966e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2674be44d5920cdb8d4433682428b6dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d9fb1d10225e5e18980f7d5e7074e37a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5caf6c354a38db0c91ebe61adcf7b6e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a17ead3fc36f17bb3dbb62dc15b3680
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af68af2aadf0e5e4572dfedf2c6b56cf |
| publicationDate |
2008-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7436039-B2 |
| titleOfInvention |
Gallium nitride semiconductor device |
| abstract |
A gallium nitride based semiconductor Schottky diode fabricated from a n+ doped GaN layer having a thickness between one and six microns disposed on a sapphire substrate; an n− doped GaN layer having a thickness greater than one micron disposed on said n+ GaN layer patterned into a plurality of elongated fingers and a metal layer disposed on the n− doped GaN layer and forming a Schottky junction therewith. The layer thicknesses and the length and width of the elongated fingers are optimized to achieve a device with breakdown voltage of greater than 500 volts, current capacity in excess of one ampere, and a forward voltage of less than three volts. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10381508-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7842974-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010207166-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015099363-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8999849-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8044485-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006011937-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007228519-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011006307-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I493617-B |
| priorityDate |
2005-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |