http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7830010-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 |
| filingDate | 2008-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2010-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8cceade7baf6f90c91b0aecc8480cbd7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17a8889674c91044d451131e1a43c2b2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d532158261056a682d2f2a682145c95 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8ac2a5842aea96cd48c4f67bc65fd07 |
| publicationDate | 2010-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-7830010-B2 |
| titleOfInvention | Surface treatment for selective metal cap applications |
| abstract | Interconnect structures in which a noble metal-containing cap layer is present directly on a non-recessed surface of a conductive material which is embedded within a low k dielectric material are provided. It has been determined that by forming a hydrophobic surface on a low k dielectric material prior to metal cap formation provides a means for controlling the selective formation of the metal cap directly on the non-recessed surface of a conductive material. That is, the selective formation of the metal cap directly on the non-recessed surface of a conductive material is enhanced since the formation rate of the metal cap on the non-recessed surface of a conductive material is greater than on the hydrophobic surface of the low k dielectric material. It is observed that the hydrophobic surface may be a result of treating a damaged surface of the dielectric material with a silylating agent prior to the selective formation of the noble metal cap or, as a result of forming a hydrophobic polymeric layer on the surface of the dielectric material prior to the selective deposition of the noble metal cap. The hydrophobic polymeric layer typically includes atoms of Si, C and O. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11569128-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11239165-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10943824-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018144973-A1 |
| priorityDate | 2008-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 76.