Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_71b00fc8a4d3c3ada4612da97229c1cf http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_224f9987225bc1791ad3f1111d03c7c6 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-77 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-428 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-402 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-2991 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-6455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3414 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-14 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B22F3-15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B22F5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B1-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 |
filingDate |
2005-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2010-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f1aadb6b0913aa177e75991c689bc01e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3de3bf43446359284738b1131925c89f |
publicationDate |
2010-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-7749406-B2 |
titleOfInvention |
SiOx:Si sputtering targets and method of making and using such targets |
abstract |
Silicon oxide and electrically conductive doped silicon materials are joined in a protective environment to yield a composite SiO x :Si material that exhibits the properties of SiO x , and yet is electrically conductive due to the presence of the Si. Such a composite material finds use as a target for DC and/or AC sputtering processes to produce silicon oxide thin films for touch-screen applications, barrier thin films in LCD displays and optical thin films used in a wide variety of applications. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007131536-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8435388-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010219064-A1 |
priorityDate |
2005-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |