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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26
filingDate 2004-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2010-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2010-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7700267-B2
titleOfInvention Immersion fluid for immersion lithography, and method of performing immersion lithography
abstract An immersion lithographic system 10 comprises an optical surface 51 , an immersion fluid 60 with a pH less than 7 contacting at least a portion of the optical surface, and a semiconductor structure 80 having a topmost photoresist layer 70 wherein a portion of the photoresist is in contact with the immersion fluid. Further, a method for illuminating a semiconductor structure 80 having a topmost photoresist layer 70 comprising the steps of: introducing an immersion fluid 60 into a space between an optical surface 51 and the photoresist layer wherein the immersion fluid has a pH of less than 7, and directing light preferably with a wavelength of less than 450 nm through the immersion fluid and onto the photoresist.
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