| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-495
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4958
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76864 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| filingDate |
2009-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2010-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d9fe49ea47c976a2c7c17308411066d6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3478a0f3dbb1f94644f7728cda48ec0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_677a21db4f7f686498c3a92f526d4be0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0d6317d88ef91ebd54f8d34869b8e3ba |
| publicationDate |
2010-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7691742-B2 |
| titleOfInvention |
Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA |
| abstract |
In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating a liquid tantalum precursor containing tertiaryamylimido-tris(dimethylamido) tantalum (TAIMATA) to a temperature of at least 30° C. to form a tantalum precursor gas and exposing the substrate to a continuous flow of a carrier gas during an atomic layer deposition process. The method further provides exposing the substrate to the tantalum precursor gas by pulsing the tantalum precursor gas into the carrier gas and adsorbing the tantalum precursor gas on the substrate to form a tantalum precursor layer thereon. Subsequently, the tantalum precursor layer is exposed to at least one secondary element-containing gas by pulsing the secondary element-containing gas into the carrier gas while forming a tantalum barrier layer on the substrate. The tantalum barrier layer may contain tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride or tantalum oxynitride. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8637410-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10636705-B1 |
| priorityDate |
2004-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |