http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7554145-B2

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filingDate 2006-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2009-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a52a3499743e50d7898691edd97b2b7a
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publicationDate 2009-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7554145-B2
titleOfInvention Magnetic memory cells and manufacturing methods
abstract An improved magnetoresistive memory device has a reduced distance between the magnetic memory element and a conductive memory line used for writing to the magnetic memory element. The reduced distance is facilitated by forming the improved magnetoresistive memory device according to a method that includes forming a mask over the magnetoresistive memory element and forming an insulating layer over the mask layer, then removing portions of the insulating layer using a planarization process. A conductive via can then be formed in the mask layer, for example using a damascene process. The conductive memory line can then be formed over the mask layer and conductive via.
priorityDate 2005-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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