| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76808 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2002-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2003-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_957ac78bcc0462f237e1ddf842fe64db
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_baf861c546eb321b92cd1dc27d14f95b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6305b049d4bbfd69e9f699dd68096159
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e58280734063e355ddbca26a38154bcd |
| publicationDate |
2003-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6638853-B1 |
| titleOfInvention |
Method for avoiding photoresist resist residue on semioconductor feature sidewalls |
| abstract |
A method for improving a photolithographic patterning process to avoid undeveloped photoresist contamination in a semiconductor manufacturing process including providing a semiconductor wafer having a process surface including a first anisotropically etched opening extending through a semiconductor wafer thickness portion including an underlying dielectric insulating layer; blanket depositing a polymeric resinous layer over the semiconductor wafer process surface to include filling the first anisotropically etched opening; curing the polymeric resinous layer by exposing the polymeric resinous layer to at least one of thermal or photonic energy to initiate polymer cross linking; chemically mechanically polishing (CMP) the polymeric resinous layer to substantially remove the polymeric resinous layer thickness above the process surface; and, forming a photolithographically patterned photoresist layer over the process surface for forming a second anisotropically etched opening overlying and encompassing the first anisotropically etched opening. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005148170-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004048480-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007190778-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9640396-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008283494-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007096230-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004074867-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005032354-A1 |
| priorityDate |
2002-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |