| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1031 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76808 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2006-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2009-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cdfe937339cee654c1fd78dab0b5a767
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22691f78e0679dc391e7172ba32d0b66 |
| publicationDate |
2009-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7501353-B2 |
| titleOfInvention |
Method of formation of a damascene structure utilizing a protective film |
| abstract |
Disclosed is a method for the formation of features in a damascene process. According to the method, vias are formed in a dielectric layer and then covered by a layer of high molecular weight polymer. The high molecular weight polymer covers the vias but does not enter the vias. A trench is then etched through the high molecular weight polymer and the dielectric layer. Any remaining high molecular weight polymer is then removed. |
| priorityDate |
2006-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |