| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31695
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-469 |
| filingDate |
2005-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2009-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a750084348a537d08a6cce1034bcb66 |
| publicationDate |
2009-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7498270-B2 |
| titleOfInvention |
Method of forming a silicon oxynitride film with tensile stress |
| abstract |
A method for forming a densified silicon oxynitride film with tensile stress and a semiconductor device including the densified silicon oxynitride film. The densified silicon oxynitride film can be formed by depositing a porous SiNC:H film on a substrate in a LPCVD process, and exposing the porous SiNC:H film to an oxygen-containing gas to incorporate oxygen into the SiNC:H film, thereby forming a densified SiONC:H film having a greater density than the porous SiNC:H film. The densified silicon oxynitride film can be included on a substrate including the semiconductor device. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8119540-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10559470-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009246973-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7807586-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019228976-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009246974-A1 |
| priorityDate |
2005-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |