http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7479457-B2

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filingDate 2005-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2009-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2009-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7479457-B2
titleOfInvention Gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof
abstract Atomic oxygen generated in oxygen stripping plasmas reacts with and damages low-k dielectric materials during stripping of dielectric post etch residues. While damage of low-k dielectric materials during stripping of dielectric post etch residues is lower with hydrogen stripping plasmas, hydrogen stripping plasmas exhibit lower strip rates. Inclusion of oxygen in a hydrogen stripping plasma improves both photoresist strip rate and uniformity, while maintaining a hydrogen to oxygen ratio avoids low-k dielectric material damage.
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