http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6511916-B1

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filingDate 2002-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2003-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a0a6a52929b04d1f5e6b7cbfd2151338
publicationDate 2003-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6511916-B1
titleOfInvention Method for removing the photoresist layer in the damascene process
abstract First of all, a semiconductor substrate having a dielectric layer thereon is provided. Then a photoresist layer is formed and defined on the dielectric layer. Afterward, an etching process is performed by way of using the photoresist layer as an etching mask to etch through the dielectric layer, so as to form a trench and a polymer layer on the photoresist layer. Subsequently, performing a removing process with two steps strips the photoresist layer and the polymer layer thereof, whereby this removing process with two steps can keep the trench profile and avoid the residues of the polymer layer.
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Total number of triples: 28.