| abstract |
A ruthenium-containing thin film is formed. Typically, the ruthenium-containing thin film has a thickness in a range of about from 1 nm to 20 nm. The ruthenium-containing thin film is annealed in an oxygen-free atmosphere, for example, in N 2 forming gas, at a temperature in a range of about from 100° C. to 500° C. for a total time duration of about from 10 seconds to 1000 seconds. Thereafter, copper or other metal is deposited by electroplating or electroless plating onto the annealed ruthenium-containing thin film. In some embodiments, the ruthenium-containing thin film is also treated by UV radiation. |