| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31637
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31641 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31691
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31645
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3141
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40 |
| filingDate |
2006-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2008-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06607fee59ba09fbcf5bcd2c1c0da7cc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad9d2d4d1c791c953211d1c71e8d4b05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ff16dde8ee2fbde449f02e53bf3ba66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3799bfc9b8d27d77ec5eb966116f851
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42547a836bc4a1845a057e0883dab300 |
| publicationDate |
2008-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7425514-B2 |
| titleOfInvention |
Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same |
| abstract |
Disclosed are methods of forming dielectric materials using atomic layer deposition (ALD) and methods of forming dielectric layers from such materials on a semiconductor device. The ALD process utilizes a first reactant containing at least one alkoxide group that is chemisorbed onto a surface of a substrate and then reacted with an activated oxidant that contains no hydroxyl group to form a dielectric material exhibiting excellent step coverage and improved leakage current characteristics. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8012824-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8785272-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10699899-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10056249-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006246698-A1 |
| priorityDate |
2001-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |