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publicationDate 2008-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7358612-B2
titleOfInvention Plasma treatment at film layer to reduce sheet resistance and to improve via contact resistance
abstract A method of manufacturing a semiconductor device contact including forming an insulating layer over a substrate and forming an agglutinating layer over the insulating layer. The agglutinating layer is then exposed to a plasma treatment. A barrier layer is formed over the plasma-treated agglutinating layer, and a conductive layer is formed over the barrier layer.
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