| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_242f9943073f72a7e5ebaf173662f5b9 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1292 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44 |
| filingDate |
2005-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2008-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4161d22f223720f5cc7c88493ef14676
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60146c10946b3d9d5fa38940aeb74b95
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4db1fd86785a38f8e3a996e659d9a505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4533c90bc130f0f6949a269d5263908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_08ea34f62289238698f0b45e6c092e09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f98f5b42f6290b6b0788c370274cd14b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd7111c9c4901f2617afc675a2d28f04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f36bf36c2431d314236e714081487c93
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87b253d0b1f12ada65eb7ce8aeee5a4d |
| publicationDate |
2008-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7315068-B2 |
| titleOfInvention |
Interface layer for the fabrication of electronic devices |
| abstract |
The present invention is directed to methods for making electronic devices with a thin anisotropic conducting layer interface layer formed between a substrate and an active device layer that is preferably patterned conductive layer. The interface layer preferably provides Ohmic and/or rectifying contact between the active device layer and the substrate and preferably provides good adhesion of the active device layer to the substrate. The active device layer is preferably fashioned from a nanoparticle ink solution that is patterned using embossing methods or other suitable printing and/or imaging methods. The active device layer is preferably patterned into an array of gate structures suitable for the fabrication of thin film transistors and the like. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8741036-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8741037-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005206048-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013202795-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7557051-B2 |
| priorityDate |
2002-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |