| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/E04C5-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76811
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-467
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2005-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ca8d6ea6c85e911240cba536f73744e |
| publicationDate |
2007-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7259089-B2 |
| titleOfInvention |
Semiconductor device manufacturing method that includes forming a wiring pattern with a mask layer that has a tapered shape |
| abstract |
A semiconductor device manufacturing method includes the steps of: forming first and second insulation films on a substrate provided with a first wiring; sequentially forming first to third mask layers on the second insulation film; forming a wiring groove pattern in the third mask layer; selectively processing the third mask layer, formed to project into the inside of the wiring groove pattern, into a tapered shape; forming a contact hole pattern in the second and first mask layer, and removing the tapered shape portions of the third mask layer; and forming wiring grooves in the second insulation film by etching using the third mask layer, and forming contact holes in the insulation film by etching using the second and first mask layers. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008085608-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8703606-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10395979-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I381424-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020135546-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7462566-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10867842-B2 |
| priorityDate |
2004-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |