| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e21de07fa18fc54e2150daffc14654 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B6-4202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B6-4214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B6-3692
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B6-3652
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B6-3636 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02B6-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02327
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035281
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-109 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-109
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0352
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0232
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0216 |
| filingDate |
2003-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de81f4b6d0365d658ed19acb48a396e0 |
| publicationDate |
2007-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7256062-B2 |
| titleOfInvention |
Semiconductor photo-detector, semiconductor photo-detection device, and production methods thereof |
| abstract |
In a semiconductor photo-detector of the present invention, a first semiconductor layer, a second semiconductor layer having, and a photo-absorption part composed of a photo-absorption layer sandwiched between these layers are disposed on a substrate, at least the photo-absorption layer is formed at a position apart inwardly by a finite length from an end surface of the substrate, an end surface of the second semiconductor layer and the substrate or the end surface of the substrate is provided with a light incident facet angled inwardly as it separates from the surface of the second semiconductor or the surface of the substrate. Further, a groove as a guide of an optical waveguide for guiding incident light is disposed opposing the light incident facet, or the substrate end surface at the light incident facet side is protruded by a finite length from a tip part of the light incident facet, or between the optical waveguide and the semiconductor photo-detector is buried in a solid or liquid, or a main reaching area of incident light refracted at an upper layer of the photo-absorption layer is terminated with a substance having a smaller refractive index than the semiconductor layer of photo-absorption region part, or the light incident facet and its vicinity are buried in an organic substance. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014374734-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015001525-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7567735-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10957669-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10431562-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9716242-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10242962-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11488922-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9698366-B2 |
| priorityDate |
1997-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |