| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd83260a96356882b5f50dd097411a72 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-29
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 |
| filingDate |
2004-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0cf8429af007246dc0798168a5d33e52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ae321732587a9e5e7fae21601f68a1a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bff9e4317279eb5d270e0aff201d8f30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3fe36206b80cd0765a0fbfe9bae719bd |
| publicationDate |
2007-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7230337-B2 |
| titleOfInvention |
Semiconductor device including ladder-shaped siloxane hydride and method for manufacturing same |
| abstract |
The present invention reduces the effective dielectric constant of the interlayer insulating film while inhibiting the decrease of the reliability of the semiconductor device, which otherwise is caused by a moisture absorption. A copper interconnect comprising a Cu film 209 is formed in multilayer films comprising a L-Ox™ film 203 and a SiO 2 film 204 . Since the L-Ox™ film 203 comprises ladder-shaped siloxane hydride structure, the film thickness and the film characteristics are stable, and thus changes in the film quality is scarcely occurred during the manufacturing process. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7498660-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008067690-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8106487-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8314472-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7777341-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8344504-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010155907-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8536707-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010127357-A1 |
| priorityDate |
2003-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |