Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a0f26a9c2efad3ae086a108f3c04b57d |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2884 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5223 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2875 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-275 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 |
filingDate |
2004-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2007-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f39f70e945eda1291104e2a76a9c672d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6ed6e9d3c809f845e466b0d3b13dd87 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7936b80dab6f88cec4892325e1473881 |
publicationDate |
2007-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-7170090-B1 |
titleOfInvention |
Method and structure for testing metal-insulator-metal capacitor structures under high temperature at wafer level |
abstract |
A test structure and a test methodology are provided for testing metal-insulator-metal (MIM) capacitor structures under high temperatures at the wafer level. The test structure includes a resistor formed on a region of dielectric isolation material formed in a semiconductor substrate. The MIM capacitor is formed over the resistor and separated therefrom by dielectric material. A metal thermometer, formed from the same material as the plates of the MIM capacitor, is placed above the resistor and in close proximity to the capacitor. High current is forced through the resistor, causing both the metal thermometer and the MIM capacitor to heat up along with the resistor. The change in resistance of the metal thermometer is monitored. Using the known temperature coeffecient of resistance (TCR) for the metal used to form both the capacitor and the thermometer, changes in the measured resistance of the metal thermometer are converted to temperature. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10229873-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7468525-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8084770-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009072234-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008128691-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7678659-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007072361-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10262934-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8884288-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103367329-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103367329-A |
priorityDate |
2003-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |