http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7101747-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate | 2005-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2006-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_136df159e55f3320379a0b194ff11cb2 |
| publicationDate | 2006-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-7101747-B2 |
| titleOfInvention | Dual work function metal gates and methods of forming |
| abstract | Complementary transistors and methods of forming the complementary transistors on a semiconductor assembly are described. The transistors can be formed from a metal silicon compound deficient of silicon bonding atoms on a dielectric material overlying a semiconductor substrate conductively doped for PMOS and NMOS regions. The metal silicon compound overlying the NMOS region is converted to a metal silicon nitride and the metal silicon compound overlying the PMOS region is converted to a metal silicide. NMOS transistor gate electrodes comprising metal silicon nitride and PMOS transistor gate electrodes comprising metal silicide can be formed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006263963-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005253173-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11791391-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7759183-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7381619-B2 |
| priorityDate | 2003-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.