| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aeb63f479ae4a090565dfc962f451802 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate |
2006-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_230807ef8599df27a53241f15bf4b741 |
| publicationDate |
2006-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2006263963-A1 |
| titleOfInvention |
Dual work function metal gates and methods of forming |
| abstract |
Complementary transistors and methods of forming the complementary transistors on a semiconductor assembly are described. The transistors can be formed from a metal silicon compound deficient of silicon bonding atoms on a dielectric material overlying a semiconductor substrate conductively doped for PMOS and NMOS regions. The metal silicon compound overlying the NMOS region is converted to a metal silicon nitride and the metal silicon compound overlying the PMOS region is converted to a metal silicide. NMOS transistor gate electrodes comprising metal silicon nitride and PMOS transistor gate electrodes comprising metal silicide can be formed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8778754-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I497713-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I413170-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010065914-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105426851-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9070681-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9633856-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11631686-B2 |
| priorityDate |
2003-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |