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filingDate 2004-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2006-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7078919-B2
titleOfInvention In situ determination of resistivity, mobility and dopant concentration profiles
abstract The present invention provides techniques for an in-situ measurement of resistivity profiles and dopant concentration distributions in semiconductor structures, such as shallow junctions. A substrate with a resistor test structure having a conduction circuit may be placed at a measurement station, surface layers may be successively removed from the conduction circuit at the measurement station, a sheet resistance of the conduction circuit may be measured at the measurement station after the removal of each surface layer to generate a plurality of sheet resistance measurements, and the resistivity profile may be calculated from the plurality of sheet resistance measurements.
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