http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2281402-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-14
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2648
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26
filingDate 1994-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67edc4362ea8ccca842c32324c386fae
publicationDate 1995-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber GB-2281402-A
titleOfInvention Method for evaluating semiconductor layer
abstract An evaluating method for a semiconductor layer includes repetition of calculating the resistivity X and the Hall constant Y per unit thickness of the layer and removing a predetermined thickness surface layer portion. The resistivity X' and the Hall constant Y' per unit thickness for respective layers are calculated employing the plurality of resistivity X' and Hall constants Y' per unit thickness previously calculated for other layers:- <IMAGE> The depth direction profiles of the carrier concentration and the mobility of the semiconductor layer can be deduced without employing the entire layer thickness of the semiconductor layer the exact value of which cannot be known. A higher precision evaluation can be achieved.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6579730-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03008955-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005022135-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7078919-B2
priorityDate 1993-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 20.