| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-022 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32743
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02046 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate |
2002-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2006-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1451acee3c048c0b905d2eed5fd8badb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4bcd8f1b9e488807d52d650ac67c3237
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2dd9a1414e61c684aba3e05799e9708f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57362e84f431116f2f35d417eeb37d2a |
| publicationDate |
2006-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7018929-B2 |
| titleOfInvention |
Method for reducing a low volatility byproduct from a wafer surface following an etching process |
| abstract |
A method for in-situ reduction of volatile residual contamination on a semiconductor process wafer following a plasma etching process including providing an ambient controlled chamber for accepting transfer of a semiconductor process wafer under controlled ambient conditions following a plasma etching process; providing a heat exchange surface disposed with the ambient controlled chamber in heat exchange relationship with means for heating the heat exchange surface; transferring a semiconductor process wafer having volatile residual contamination under controlled ambient conditions to the ambient controlled chamber; mounting the semiconductor process wafer in heat exchange relationship with the heat exchange surface; and, heating in-situ the heat exchange surface for a time period to thereby heat the semiconductor process wafer to vaporize the volatile residual contamination on the semiconductor process wafer while simultaneously removing a resulting vapor from the ambient controlled chamber. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008194075-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10072351-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017051429-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007082458-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7645678-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104051246-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7781293-B2 |
| priorityDate |
2002-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |