| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1af8df51ce24ca931ae718fb747f6aa0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-22 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F41-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01F10-3254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y25-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-062
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-94
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-113
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-119
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F10-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8246
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8239
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01F41-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 |
| filingDate |
2004-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2006-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c29d380f0cefa977301df1c33ee1fb24 |
| publicationDate |
2006-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7015524-B2 |
| titleOfInvention |
Method of etching magnetic material, magnetoresistive film and magnetic random access memory |
| abstract |
A spin tunneling magnetoresistive film 110 , which comprises a first magnetic film 111 , a tunnel film 112 and a second magnetic film 113 , is formed on a substrate 101 , and on the top surface of the spin tunneling magnetoresistive film 110 a resist film 102 having a desired shape is formed. The magnetic films 111, 113 are each an alloy film of a rare earth metal-transition metal. The spin tunneling magnetoresistive film 110 is plasma etched by using a mixed gas of carbon monoxide gas and ammonia gas. A sidewall substance 103 adhering to a side surface of the spin tunneling magnetoresistive film 110 is oxidized or nitrided by performing plasma etching by use of oxygen gas or nitrogen gas. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9893121-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9318697-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9246082-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9876165-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9425388-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8956882-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7819979-B1 |
| priorityDate |
2003-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |