| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S257-90
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 |
| filingDate |
2002-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2005-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd2e980544f1e7a6d4fe6a0b9e920816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58c55c8a433fde54e93d7037d48817a8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc125a64842b94689f039e8d956052fd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0951ff354a86ce9d2d76f8a3685c18c2 |
| publicationDate |
2005-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6940134-B2 |
| titleOfInvention |
Semiconductor with contact contacting diffusion adjacent gate electrode |
| abstract |
Methods of forming a contact to a gate electrode or substrate despite misalignment of the contact opening due to lithographic techniques, and a semiconductor having such a contact. Silicide can be created on the gate and/or diffusion using the invention. |
| priorityDate |
2002-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |