| abstract |
A TiSiN film is used as a barrier metal layer for a semiconductor device to prevent the diffusion of Cu. The TiSiN film is formed by a plasma CVD process or a thermal CVD process. TiCl 4 gas, a silicon hydride gas and NH 3 gas are used as source gases for forming the TiSiN film by the thermal CVD process. TiCl 4 gas, a silicon hydride gas, H 2 gas and N 2 gas are used as source gases for forming a TiSiN film by the plasma CVD process. |