| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_62f941494409aea84f621977c5f0ab81 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2003-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2005-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8eccf376fbf92385ec9766b17551a17
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a6be68677eae24f54396235d08bbf78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff991e0301aaf35c578c514aa4c913bf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6b1ab6bda0a1af86233d128bb2f409cc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b1125877a57ecf760543220361ab1002 |
| publicationDate |
2005-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6888249-B2 |
| titleOfInvention |
Fabrication of semiconductor devices with air gaps for ultra low capacitance interconnections and methods of making same |
| abstract |
A method of forming an air gap or gaps within solid structures and specifically semiconductor structures to reduce capacitive coupling between electrical elements such as metal lines, wherein a sacrificial material is used to occupy a closed interior volume in a semiconductor structure is disclosed. The sacrificial material is caused to decompose into one or more gaseous decomposition products which are removed, in one embodiment by diffusion, through an overcoat layer. The decomposition of the sacrificial material leaves an air gap or gaps at the closed interior volume previously occupied by the sacrificial material. The air gaps may be disposed between electrical leads to minimize capacitive coupling therebetween. Also disclosed are methods of forming multi-level air gaps and methods or forming over-coated conductive lines or leads wherein a portion of the overcoating is in contact with at least one air gap. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009234056-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8497203-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008237581-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008242112-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9706656-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005170670-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7795614-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7829625-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7754510-B2 |
| priorityDate |
2000-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |