| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38520f366e74704305b34fb93a81121e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76864 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2002-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2004-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b10fe878290a9ee9e5d350effd2b6461
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11b57348f89bd5b96f34e76b0c412d3e |
| publicationDate |
2004-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6780764-B2 |
| titleOfInvention |
Method of forming a patterned tungsten damascene interconnect |
| abstract |
A method for forming a semiconductor device includes providing a semiconductor substrate, forming an insulating film having a opening, forming a titanium film so as to extend from the semiconductor substrate in the opening to the insulating film surface, plasma treating the titanium film with a mixed gas of hydrogen and nitrogen; and forming a titanium nitride on the titanium film. Accordingly, the method can decrease a contact resistance of the tungsten interconnection in a contact hole. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6927159-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7384866-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005221612-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005158990-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004241979-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008070405-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005179141-A1 |
| priorityDate |
2000-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |