| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31612
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31625
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02129
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
2002-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2003-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a15a59819d487774e65e5f81f9c9c539
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3560fef069e0d0049dda64f2e0fa28f0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c6a42c74522993b8d30ce3ef60aaea9e |
| publicationDate |
2003-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6667540-B2 |
| titleOfInvention |
Method and apparatus for reducing fixed charge in semiconductor device layers |
| abstract |
The fixed charge in a borophosphosilicate glass insulating film deposited on a semiconductor device is reduced by reacting an organic precursor such as TEOS with O 3 . When done at temperatures higher than approximately 480 degrees C., the carbon level in the resulting film appears to be reduced, resulting in a higher threshold voltage for field transistor devices. |
| priorityDate |
1996-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |