| abstract |
A method for fabricating semiconductors is provided in which a conformal layer is formed superjacent at least two conductive layers. The conformal layer has a thickness of at least 50 ANGSTROM . A barrier layer is then formed superjacent the conformal layer to prevent subsequent layers from diffusing into active regions. The barrier layer is preferably Si3N4. A glass layer is then formed superjacent the barrier layer. The glass layer has a thickness of at least 1 k ANGSTROM . The glass layer is heated to a temperature of at least 800 DEG C. for at least 15 minutes while introducing H2 and O2 at a high temperature to cause vaporization, thereby causing the glass layer to reflow. Next, the glass layer is exposed to a gas and radiant energy for 5 to 60 seconds, thereby making said glass layer planar. The radiant energy generates a temperature within the range of 700 DEG C. to 1250 DEG C. Further, the gas is at least one of N2, NH3, O2, N2O, Ar, Ar-H2, H2, GeH4, and a fluorine based gas. |