http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6544583-B2

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C17-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C17-075
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01C17-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01C17-075
filingDate 2000-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2003-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf3b5703aec01fe5859d66536854d35f
publicationDate 2003-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-6544583-B2
titleOfInvention Method for adjusting resistivity of a film heater
abstract A method for adjusting resistivity of a film heater on a substrate for use in process fluids employed in the semiconductor-processing industry as part of a clean, particle-free, nonreactive, non-trapping, ultra-pure, thermally tolerant, sealed system. In one arrangement, the method includes the steps of selecting a heating rate, selecting an electrical resistance value in accordance with the heating rate, selecting a resistive material for coating a substrate to produce resistance heating consistent with the electrical resistance value, selecting dimensions for a film of the resistive material selected to balance effects of conductivity, resistivity, length, and area against effects of the heating rate, and forming the film by conformally coating a surface of the substrate with the film at the selected dimensions.
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priorityDate 2000-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 39.