patent/US-6540838-B2

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6540838-B2

Outgoing Links

Predicate	Object
assignee	http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_95421ca98cd6c9b088dbf03ec09375ab
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classificationIPCAdditional	http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
classificationIPCInventive	http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C8-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-452 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
filingDate	2002-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate	2003-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f8955d1f0b5d68cd2e4ece42d26cc1d3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa69f4d6e6b68562a3f5f19799a7a899
publicationDate	2003-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	US-6540838-B2
titleOfInvention	Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition
abstract	A new method and apparatus for avoiding contamination of films deposited in layered depositions, such as Atomic Layer Deposition (ALD) and other sequential chemical vapor deposition (CVD) processes, is taught, wherein CVD-deposited contamination of ALD films is prevented by use of a pre-reaction chamber that effectively causes otherwise-contaminating gaseous constituents to deposit on wall elements of gas-delivery apparatus prior to entering the ALD chamber.
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