| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_526cb931f1382d6e016ee651d55e1365 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07C251-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F220-34 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C251-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F2-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B1-111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F220-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F220-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02B1-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F220-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F4-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F4-04 |
| filingDate |
2002-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2003-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff4c3cad330a7f5683775dc4b6a3166c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca04fcbbc3e1b61b62bb58f0aa7d7c11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ceee7a0045072063eb95cc24006166db |
| publicationDate |
2003-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6538090-B2 |
| titleOfInvention |
Organic anti-reflective polymer and method for manufacturing thereof |
| abstract |
Polymers are disclosed having the following formula 1 or 2:Polymers of the present invention can be used as an ARC material useful for submicrolithography processes using 248 nm KrF, 193 nm ArF and 157 nm F2 lasers. The polymers contain a chromophore substituent that exhibits sufficient absorbance at the wavelengths useful for the submicrolithography process. The ARC prevents back reflection of light from lower layers and the alteration of the CD by diffracted and reflected light from the lower layers. The ARC also eliminates standing waves and reflective notching due to the optical properties of lower layers on the wafer and to changes in the thickness of the photosensitive film applied thereon, thereby resulting in the stable formation of ultrafine patterns suitable for 64M, 256M, 1 G, 4 G and 16 G DRAMs and a great improvement in the production yield. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7465531-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006199107-A1 |
| priorityDate |
1999-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |