| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a62c92e56568bd104089aac22ca487b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 |
| filingDate |
2001-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2003-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97b22a44542905014bf649b2d9a83c11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3ba7d40d33fa7528eabfb3eae734c8f3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07db0165610c27310062a1f1aba2529d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b61cbbfebd0f206a116319ec3841228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8fd1ea4a1a0acd28cb6cb0853ad6c94 |
| publicationDate |
2003-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6518646-B1 |
| titleOfInvention |
Semiconductor device with variable composition low-k inter-layer dielectric and method of making |
| abstract |
Strong adhesion to doped low-k inter-layer dielectrics is provided by varying the composition of dopant near the surface layers of the inter-layer dielectric. The concentration of dopant is gradually increased from about zero atomic % at the interface between the inter-layer dielectric and semiconductor substrate to improve adhesion of the inter-layer dielectric to the semiconductor substrate. The concentration of dopant at the upper surface of the inter-layer dielectric is gradually decreased to about zero atomic % at the upper surface of the inter-layer dielectric film in order to improve adhesion of additional layers to the inter-layer dielectric. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009206304-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7273823-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7265437-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006276054-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005242414-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7297376-B1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010015816-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014143337-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9188544-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7998880-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7557043-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013265572-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8889042-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7352053-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010028695-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8293634-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6858153-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7259111-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006166491-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005023694-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006202311-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007205507-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006286793-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9323164-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2006160376-A1 |
| priorityDate |
2001-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |