| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_371290089320f9469a0809aea17b2a22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f171e3de513890e436d5ac5d8e41933c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_339637137e424b4379cce79f1d6d9944
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_308f203ea5165e8e942b0e9129d6a41b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cb1f25b354792a6716c6b8cbb5ec0c60 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-913 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31633
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4404
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-469
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-00 |
| filingDate |
2006-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f4ece39693677bcff4e5dbba2dde05f4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_518266069c1758b623a29b95c68e8ebe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f885bd6679608d2875733875a0ef3c8a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_363e66253061d6205903908eb0ce2ca8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ecdb4fbca7724ce602775a0c7cbceea6 |
| publicationDate |
2006-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2006219175-A1 |
| titleOfInvention |
Oxide-like seasoning for dielectric low k films |
| abstract |
A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more oxidizing gases and depositing a low dielectric constant layer on a substrate in the chamber from a second mixture comprising one or more organosilicon compounds and one or more oxidizing gases, wherein a ratio of the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the first mixture is lower than the total flow rate of the organosilicon compounds to the total flow rate of the oxidizing gases in the second mixture. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010267224-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008216302-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8642128-B2 |
| priorityDate |
2004-04-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |