| abstract |
A high dielectric constant insulator including a thin film of a metal oxide selected from the group consisting of tungsten-bronze-type oxides, pyrochlore-type oxides, and combinations of Bi2O3 with an oxide selected from the group consisting of perovskites and pyrochlore-type oxides. An embodiment contains metal oxides represented by the general stoichiometric formulas AB2O6, A2B2O7 and A2Bi2B2O10, wherein A represents A-site atoms selected from the group of metals consisting of Ba, Bi, Sr, Pb, Ca, K, Na and La; and B represents B-site atoms selected from the group of metals consisting of Ti, Zr, Ta, Hf, Mo, W and Nb. Preferably, the metal oxides are (BaxSr1-x)(TayNb1-y)2O6, where 0<=x<=1.0 and 0<=y<=1.0; (BaxSr1-x)2(TayNb1-Y)2O7, where 0<=x<=1.0 and 0<=y<=1.0; and (BaxSr1-x)2Bi2(TayNb1-y)2O10, where 0<=x<=1.0 and 0<=y<=1.0. Thin films according to the invention have a relative dielectric constant >=40, and preferably about 100. The value of Vcc in the metal oxides of the invention is close to zero. The value of Tcc is <1000 ppm, preferably <100. |