| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1078 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2000-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2002-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27bf14955599d31b80923b0c0b344e3c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4053da6464b972941fc19f46b13c4cde
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4427f44629a8cc56948d97e036d3a177
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc8faf38dd0299cce8c21bee714f1f89
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1dbf391a5858a4cd70bf3a3f7fc0423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dafda40e692f72326de708e7e97b9e8f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa1583016f026596b0d185420a5aed40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ff32ac3598685158486f4c98d4384fe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ea06ab30a70ee5f88482f52110fe017 |
| publicationDate |
2002-08-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6436823-B1 |
| titleOfInvention |
Method for forming a TiN layer on top of a metal silicide layer in a semiconductor structure and structure formed |
| abstract |
A method for forming a TiN layer on top of a metal silicide layer in a semiconductor structure without the formation of a thick amorphous layer containing Ti, Co and Si and the structure formed are provided. In the method, after a Ti layer is deposited on top of a metal silidide layer, a dual-step annealing process is conducted in which a low temperature annealing in a forming gas (or ammonia) at a temperature not higher than 500° C. is first conducted for less than 2 hours followed by a high temperature annealing in a nitrogen-containing gas (or ammonia) at a second temperature not lower than 500° for less than 2 hours to form the TiN layer. The present invention method prevents the problem usually caused by a thick amorphous material layer of Ti—Si—Co which produces weakly bonded Ti which reacts with fluorine atoms from WF 6 during a subsequent CVD W deposition process and causes liner failure due to a volume expansion of the amorphous material. The maximum thickness of the amorphous material layer formed by the present invention method is less than 5 nm which minimizes the line failure problem. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004132283-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004137716-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101206998-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7060603-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7226854-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2005158883-A1 |
| priorityDate |
2000-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |