| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02277
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S257-904 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02131
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-15 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11 |
| filingDate |
2000-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2002-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bf1a6c66bbe0341dcb0480e5ec9241e |
| publicationDate |
2002-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6358808-B1 |
| titleOfInvention |
Semiconductor element with thermally nitrided film on high resistance film and method of manufacturing the same |
| abstract |
In a method of manufacturing a semiconductor device, an insulating film is formed on a semiconductor substrate. A semiconductor film pattern is formed on the insulating film. A direct thermal nitriding method is performed to at least a portion of the semiconductor film pattern. The direct thermal nitriding method is performed by lamp annealing in a gas composed of nitrogen such that a thermally nitrided film has a film thickness of equal to or thicker than 1.5 nm. Thus, invasion of a hydrogen atom or ion into the semiconductor film pattern can be prevented. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101640187-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101640187-B |
| priorityDate |
1997-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |