| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
1994-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_abb18267de8d0ec051743e91ff5649ad |
| publicationDate |
1995-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H07316823-A |
| titleOfInvention |
Plasma CVD apparatus and plasma CVD method |
| abstract |
(57) [Summary] [Object] To provide a plasma CVD apparatus and a plasma CVD method capable of forming a flattening insulating film having a small amount of residual organic components and hydrogen and having a dense film quality and excellent self-flow characteristics. [Structure] Liquid phase CV equipped with helicon wave plasma source The D device irradiates the liquefied deposition species on the substrate 1 to be processed with reactive species having a high flux density to form a film. [Effect] As compared with the conventional liquid-phase plasma CVD, the reactive species are supplied with a higher probability, so that the planarization insulating film 2 with excellent film quality is obtained. 3 can be formed. This effect is further enhanced by intermittently controlling the solenoid of the helicon wave plasma generation source. Due to these effects, it is possible to manufacture a highly reliable highly integrated semiconductor device. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8980382-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9018108-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8889566-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009170922-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002184578-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6358808-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009111382-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9404178-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9412581-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6194775-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9285168-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10283321-B2 |
| priorityDate |
1994-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |