| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-18 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-18 |
| filingDate |
2000-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_26b106bab26259be9d861e7313ecc159
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf0bd3b888b299e20c9fe97cd5d93b33 |
| publicationDate |
2001-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6306217-B1 |
| titleOfInvention |
Metal complexes with chelating C-,N-donor ligands for forming metal-containing films |
| abstract |
A method of forming a film on a substrate using transition metal or lanthanide complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007231485-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2002146902-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6900107-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7045451-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004198042-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2004194703-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009156852-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6979370-B2 |
| priorityDate |
1998-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |