| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_57341227c065dbddd1d3cf801bbaa86a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3143
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-26 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-26 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate |
1999-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2001-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3dd1dfd72ca6af46ff4069391c4ec35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0cb614b97cf1155b0c2bcd4012e571f7 |
| publicationDate |
2001-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6258734-B1 |
| titleOfInvention |
Method for patterning semiconductor devices on a silicon substrate using oxynitride film |
| abstract |
A method for fabricating and patterning semiconductor devices with a resolution down to 0.12 μm on a substrate structure. The method begins by providing a substrate structure comprising various layers of oxide and/or nitride formed over either monocrystalline silicon or polycrystalline silicon. A silicon oxynitride layer is formed on the substrate structure. Key characteristics of the oxynitride layer include: a refractive index of between about 1.85 and 2.35 at a wavelength of 248 nm, an extinction coefficient of between 0.45 and 0.75 at a wavelength of 248 nm, and a thickness of between about 130 Angstroms and 850 Angstroms. A photoresist layer is formed over the silicon oxynitride layer and exposed at a wavelength of between about 245 nm and 250 nm; whereby during exposure at a wavelength of between 245 nm 250 nm, the silicon oxynitride layer provides a phase-cancel effect. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110890376-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110890376-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6599766-B1 |
| priorityDate |
1999-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |